https://doi.org/10.1007/s100510050551
Raman and infrared spectroscopical investigation of the optical vibrational modes in GaSb/AlSb superlattices
1
Institute of Semiconductor Physics,
630090, Novosibirsk, Russia
2
Institut für Physik, Technische
Universität Chemnitz, 09107 Chemnitz,
Germany
Corresponding author: a milekhin@physicus.physik.tu-chemnitz.de
Received:
11
May
1998
Accepted:
21
July
1998
Published online: 15 December 1998
The vibrational spectrum of ultra-thin layer GaSb/AlSb superlattices was investigated in detail by infrared (IR) and Raman spectroscopies. The effect of confinement of the transverse and longitudinal optical phonons in both types of the layers was studied. The dispersions of optical phonons of the GaSb and the AlSb obtained from the analysis of the Raman and IR spectra are in a good accordance with the theoretical data and results of neutron scattering experiments. First- and second-order Raman spectroscopy indicates the presence of intermixture of atoms at the interfaces in the GaSb/AlSb superlattices.
PACS: 63.20.Dj – Phonon states and bands, normal modes, and phonon dispersion / 78.30.Fs – III-V and II-VI semiconductors
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1998
