Raman scattering of Ge dot superlattices
Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany
2 Institute of Semiconductor Physics, 630090, Novosibirsk, Russia
Published online: 15 July 2000
Self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers utilizing Stranski-Krastanov growth mode were investigated by Raman spectroscopy. An average size of Ge quantum dots was obtained from transmission electron microscopy measurements. The strain and interdiffusion of Ge and Si atoms in Ge quantum dots were estimated from the analysis of frequency positions of optical phonons observed in the Raman spectra. Raman scattering by folded longitudinal acoustic phonons in the Ge dot superlattices was observed and explained using of elastic continuum theory.
PACS: 78.66.Db – Elemental semiconductors and insulators / 78.30.Am – Elemental semiconductors and insulators / 63.22.+m – Phonons in low-dimensional structures and small particles
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2000