https://doi.org/10.1140/epjb/s10051-025-01023-z
Research - Condensed Matter
Quantum capacitance in two-dimensional TMDC semiconductors: effects of temperature, electric field, and spin–valley Zeeman field
1
Faculty of Natural Sciences, Pham Van Dong University, 570000, Quang Ngai, Vietnam
2
Laboratory of Applied Physics, Science and Technology Advanced Institute, Van Lang University, Ho Chi Minh City, Vietnam
3
Faculty of Applied Technology, School of Technology, Van Lang University, Ho Chi Minh City, Vietnam
a
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Received:
8
June
2025
Accepted:
7
August
2025
Published online:
12
August
2025
Abstract
We investigate the dependence of quantum capacitance
on the Fermi energy
in two-dimensional semiconductor materials belonging to the transition metal dichalcogenide (TMDC) family, taking into account the influences of external electric fields, Zeeman fields, and temperature. At low temperatures, distinct peaks and abrupt steps are clearly observed; whereas, at room temperature, these features are suppressed owing to thermal broadening from the Fermi–Dirac distribution. When external electric fields and Zeeman field components are introduced, the structure of
becomes more complex, exhibiting step-like features and deep valleys around the Fermi level. These reflect energy level splitting induced by spin–orbit coupling and valley polarization. A comparison among MoS2, MoSe2, WS2, and WSe2 reveals significant differences in the band gap width and density of states. These results demonstrate that the quantum capacitance in TMDCs is sensitive to external parameters, highlighting its potential for applications in quantum electronic devices, high-sensitivity sensors, and spintronic technologies based on two-dimensional materials.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

