https://doi.org/10.1140/epjb/s10051-025-01031-z
Regular Article - Solid State and Materials
Organic semiconductor spacer thickness-dependent interface defect state spin injection across tunnel magnetoresistance devices
1
Department of ECE, Koneru Lakshmaiah Education Foundation, 522302, Vaddeswaaram, AP, India
2
Department of ECE, Sri Vasavi Engineering College, 534101, Tadepalligudem, AP, India
a
debajitdeb12pec018@gmail.com
Received:
3
March
2025
Accepted:
21
August
2025
Published online:
12
September
2025
This study investigates the effect of organic spacer layer thickness on spin transport in magnetic tunnel junctions (MTJs) of the form 
/x/Co (x=Rubrene, 
) with Rubrene and as organic spacer layers. The simulation uses a nonequilibrium Green’s function, assuming spin precession at defect states at the ferromagnet/organic semiconductor interface. Parallel and antiparallel resistances have been observed to be thickness-independent at low thicknesses due to excellent magnetic coupling and minimal interfacial imperfections that eventually increased at high thicknesses. Drastic reduction of parallel and antiparallel currents at high-thickness regime has been attributed to the trapping of spins in deeper pinning wells with strong pinning strengthNotably, the rise in tunnel magnetoresistance with thickness is high in 
O
/C
/Co device compared to the O/Rubrene/Co device and has been attributed to the change in defect state depth with thickness and electron-predominant nature of O/C/Co device. Therefore, engineering of spacer layer thickness-dependent spin transport in MTJs resulted in successful implementation of organic spacer MTJs for high-performance spintronic memory applications.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
