https://doi.org/10.1140/epjb/s10051-026-01118-1
Research - Condensed Matter
Pinning mediated spin injection at ferromagnet/organic semiconductor interface in ITO/V(TCNE)
/Rubrene/Co/Au organic spin valve
1
Department of ECE, Koneru Lakshmaiah Education Foundation, 522302, Vaddeswaram, AP, India
2
Department of Physics, Kazi Nazrul University, 713340, Asansol, WB, India
3
Department of Electronics and Communication Engineering, Faculty of Engineering and Technology, SRM Institute of Science and Technology Kattankulathur, 603203, Chennai, Tamil Nadu, India
4
Centre for Organic Spintronics and Optoelectronics Devices, Kazi Nazrul University, 713340, Asansol, WB, India
5
Solid State Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, Maharashtra, India
6
Homi Bhabha National Institute, 400094, Mumbai, Maharashtra, India
7
UM-DAE Centre for Excellence in Basic Sciences, Vidyanagari, University of Mumbai, 400098, Mumbai, India
a
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b
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Received:
3
June
2025
Accepted:
3
January
2026
Published online:
26
February
2026
Abstract
Achieving coherent spin injection at room temperature has become a major challenge in organic spin valve (OSV) devices due to strong spin pinning at ferromagnet/organic semiconductor interface. In this article, we report a study on the impact of Co/Rubrene interface on coherent spin injection across ITO/V(TCNE)
/Rubrene/Co/Au OSV device. The application of high magnetic field has been found to create strong pinning effects at the interfacial defect states. Magnetoresistance versus voltage response of the device shows anomalous field dependence which has been attributed to the spin pinning induced transport through filled and vacant states of V(3d) and
+UC energy levels of TCNE (tetracyanoethylene), respectively.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2026
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

