https://doi.org/10.1140/epjb/s10051-026-01184-5
Research - Condensed Matter
Electron correlation, thermalization, and doping effects in NbO
1
Institute of Physics, Federal University of Mato Grosso, 78060-900, Cuiabá, MT, Brazil
2
Leibniz Institute for Solid State and Materials Research Dresden, 01069, Dresden, Germany
a
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Received:
18
February
2026
Accepted:
7
May
2026
Published online:
23
May
2026
Abstract
Motivated by earlier theory and experimental studies, here we report on the correlation, thermalization, and doping-induced electronic reconstruction in rutile NbO bulk crystal. Based on density functional plus dynamical mean-field theory calculations, we show the importance of multi-orbital electron–electron interactions in concert with band structure calculations for a consistent understanding of emergent pseudogap 
electronic state and its changes upon thermalization and electron/hole doping the parent NbO compound. Our results for the pseudogap, bad-metal state should be of interest for future studies on NbO memristors for future neuromorphic computing.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2026
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
