Eur. Phys. J. B 32, 339-344 (2003)
https://doi.org/10.1140/epjb/e2003-00107-6

Effects of the indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique

¹ Facoltà di Medicina e Chirurgia dell'Università di Foggia, Viale L. Pinto, 71100 Foggia, Italy
² Istituto Nazionale di Fisica della Materia, Unità di Bari, Via Amendola 173, 70126 Bari, Italy
³ Dipartimento Interateneo di Fisica dell'Università di Bari, Via Amendola 173, 70126 Bari, Italy
⁴ Dipartimento Geomineralogico dell'Università di Bari, Via Amendola 173, 70126 Bari, Italy
⁵ Istituto di Metodologie Inorganiche e dei Plasmi del C.N.R., Via Orabona 4, 70126 Bari, Italy

Corresponding author: ^a giuseppe.perna@ba.infn.it

Received: 27 September 2002
Published online: 11 April 2003

Abstract

Thin films of n-type CdSe have been grown on a quartz substrate by laser ablating a target obtained by mixing CdSe and metallic In powders. The effects of different doping concentration of In have been investigated. X-ray diffraction spectra show that at low In density only the CdSe lattice is present in the deposited film, whereas CdIn₂Se₄ and InSe compounds are deposited at higher In concentration. Band gap narrowing and band tails are observed in the absorption spectra when the In concentration increases. Photoluminescence spectra show band-band recombinations from 10 K to room temperature.