Eur. Phys. J. B 45, 203-206 (2005)
https://doi.org/10.1140/epjb/e2005-00055-1

Exchange bias studies of NiFe/FeMn/NiFe trilayer by ion beam etching

¹ Department of Materials Engineering & ReCAMM, Chungnam National University, 305-764 Daejeon, South Korea
² Microstructure Devices Group, Electronic Materials Division, National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi-110012, India

Corresponding author: ^a cgkim@cnu.ac.kr

Received: 12 September 2004
Revised: 15 December 2004
Published online: 8 March 2005

Abstract

Effect of low energy ion beam etching on exchange bias in NiFe/FeMn/NiFe trilayer is investigated in multilayers prepared by rf magnetron sputtering. Stepwise etching and magnetization measurement of FeMn layer in an NiFe/FeMn bilayer show increase of bias as etching proceeds and FeMn thickness decreases. The bias show a maximum around 7 nm FeMn thickness and then fall sharply below 5 nm, broadly in line with the exchange bias variation at increasing FeMn thickness but in reverse order, particularly at low FeMn thickness. Progressive etching of top NiFe layer in the NiFe/FeMn/NiFe trilayer shows an initial gradual increase in bias followed by a sharp increase below 7 nm thickness of top NiFe layer, with a maximum at 2 nm thickness for both NiFe layers and greater bias for seed NiFe layer.