https://doi.org/10.1140/epjb/e2007-00127-2
Photogalvanic current in artificial asymmetric nanostructures
1
École Normale Supérieure, 45 rue d'Ulm, 75231 Paris Cedex 05, France
2
Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Novosibirsk, 630090, Russia
3
Laboratoire de Physique Théorique, UMR 5152 (CNRS), Univ. P. Sabatier, 31062 Toulouse Cedex 4, France
Received:
7
January
2007
Revised:
12
April
2007
Published online:
11
May
2007
We develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range.
PACS: 72.40.+w – Photoconduction and photovoltaic effects / 73.63.-b – Electronic transport in nanoscale materials and structures / 05.45.Ac – Low-dimensional chaos
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2007
