https://doi.org/10.1140/epjb/e2011-10932-5
Calculation of shuffle 60° dislocation width and Peierls barrier and stress for semiconductors silicon and germanium
Kunming University of Science and Technology, Kunming, 650093, P.R. China
Corresponding author: a zhl010195@163.com
Received:
28
November
2010
Revised:
28
February
2011
Published online:
11
May
2011
The dislocation width for shuffle 
dislocation in semiconductors Si and Ge have been calculated by the improved P-N theory in which the discrete effect has been taken into account. Peierls barrier and stress
have been evaluated with considering the contribution of strain
energy. The discrete effect make dislocation width wider, and Peierls barrier and stress lower. The dislocation width of dislocation in Si and Ge is respectively about 3.84 
and 4.00 (~1b, b is the Burgers vector). In the case of dislocation, after considering the contribution of strain energy, Peierls barrier and stress are increased. The Peierls barrier for dislocation in Si and Ge is respectively about 15 meV/ and 12–14 meV/, Peierls stress is about
3.8 meV/
(0.6 GPa) and 2.7–3.3 meV/ (0.4–0.5 GPa). The Peierls stress for Si agrees well with the numerical results and the critical stress at 0 K extrapolated from experimental data. Ge behaves similarly to Si.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011
