Eur. Phys. J. B (2015) 88: 79
https://doi.org/10.1140/epjb/e2015-50847-5

Regular Article

First principle study of structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon

¹ Department of Physics, Kamla Nehru Institute of Physical and Social Sciences, Sultanpur 228118, India
² Department of Applied Physics, SSGI, Shri Shankaracharya Technical Campus, Junwani 490020, India
³ Department of Physics, Birla Institute of Technology and Science, Pilani 333031, India

^a e-mail: abr.phys@gmail.com

Received: 9 December 2014
Received in final form: 27 January 2015
Published online: 1 April 2015

Abstract

Using first principle calculation, we investigate the structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon (ZBNNR). Our results show that the shift in position of silicon doping with respect to the ribbon edge causes change in the structural geometry, electronic structure and magnetization of ZBNNR. The band gap of silicon doped ZBNNR is found to become narrower as compared to that of perfect ZBNNR. We find that band gap and magnetic moment of ZBNNR can be tuned by substitutional silicon doping position and doping concentration.