Eur. Phys. J. B 2, 237-247 (1998)
https://doi.org/10.1007/s100510050246

Viable improvement of the full potential linearized augmented plane wave (FLAPW) method

Institut für Theoretische Physik der TU Clausthal, Leibnizstrasse 10, 38678 Clausthal-Zellerfeld, Germany

Corresponding author: ^a fritsche@pt.tu-clausthal.de

Received: 31 May 1997
Revised: 12 December 1997
Accepted: 18 December 1997
Published online: 15 March 1998

Abstract

A characteristic feature of the Full Potential Linearized Augmented Plane Wave (FLAPW)-method consists in the spatial subdivision of the charge density analogous to that of the one–particle wavefunctions, i.e. into a portion that is expanded in terms of spherical harmonics Y_lm inside the muffin–tin spheres and into a plane wave expansion of the interstitial charge density. To obtain the Hartree potential inside the spheres one is hence forced to solve a boundary value problem at the sphere surface. In addition, in all non-equivalent spheres each (l,m)-component of the charge density is mapped onto 300-400 radial grid points. To ensure an accelerated convergence of the calculation, the pertinent schemes require this rather large data set to be stored and mixed within 3–6 iteration steps. We show and illustrate for the example of a spin-polarized Ni–film with and without an oxygen overlayer and for bulk Si that this data set can be compressed by at least two orders of magnitude if one partitions the charge density in a different way so that the relevant portion determining the interatomic bonding can be Fourier expanded throughout the lattice cell. One thereby arrives at a modified FLAPW-scheme that combines favorable features of the original method with virtues of the pseudopotential method which consist in the simple construction of the Hartree potential and the efficient way of achieving self-consistency. These advantages can be exploited to the fullest by using Fast Fourier Transform. Moreover, forces that atoms experience in off-equilibrium positions attain a particularly simple form in terms of the charge density expansion coefficients.