https://doi.org/10.1007/s100510050311
Resonance splitting effect in semiconductor superlattices
1
Department of Physics, Tsinghua University, Beijing 100084,
P.R. China
2
Institute for Materials Research, Tohoku University, Sendai
980-8577, Japan
3
Center for Advanced Study, Tsinghua University, Beijing 100084,
P.R. China
Received:
12
October
1997
Accepted:
5
January
1998
Published online: 15 May 1998
The resonance splitting in finite semiconductor superlattices which consist of a number of electric barriers is investigated. It is found that (n-1)-fold splitting for n-barrier tunneling obtained in periodic superlattices of identical barriers no longer holds for superlattices which are periodically juxtaposed with two different building barriers. In general, one resonant domain in the former splits into two resonant subdomains in the latter, and splitting occurs each time when two new barriers are added. The results indicate that the resonance splitting is determined not only by the structure but also by the parameters of building blocks.
PACS: 73.40.Gk – Tunneling / 73.40.Kp – III-V semiconductor-to-semiconductor contact, p-n junctions, and heterojunctions
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1998
