https://doi.org/10.1007/s100510050428
Interface polarons in a heterojunction with triangular bending-band
CCAST (World Laboratory), P.O. Box 8730, Beijing 100080, P.R. China (Mailing address)
and
Laboratory of Solid State Physics, Department of Physics, Inner
Mongolia University, Hohhot, 010021, P.R. China
Corresponding author: a xxliang@nmg2.imu.edu.cn
Received:
4
November
1997
Accepted:
9
March
1998
Published online: 15 September 1998
The interface polaron states in a heterojunction are
discussed by considering an energy-band bending near the interface and
the influence of an image potential. The ground state energy and the effective
mass of a polaron are variationally calculated. The numerical results for the
GaAs/ 
heterojunction are given. It is shown that even
though the influences from bulk longitudinal optical (LO) phonons
are more important for the heterojunctions with lower Al composition,
the contributions from two branches of interface optical (IO) phonons
are not negligible. For the heterojunctions with higher Al composition,
both the influences from LO phonons and two branches of IO phonons
are important. The band-bending plays an important role for the interface
localization of polarons, but the influence of the image potential is not essential.
PACS: 71.38.+I – Polarons and electron phonon interactions / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 63.20.kr – Phonon-electron and phonon-phonon interactions
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1998
