https://doi.org/10.1007/s100510050505
Island distance in one–dimensional epitaxial growth*
1
FB 10, Theoretische Physik, Gerhard–Mercator–Universität Duisburg, 47048
Duisburg, Germany
2
Center for Polymer Studies, Boston University, Boston, 02215 MA, USA
Received:
26
May
1998
Accepted:
23
June
1998
Published online: 15 October 1998
The typical island distance 
in submonolayer epitaxial growth depends on
the growth conditions via an exponent γ. This exponent is known to depend
on the substrate dimensionality, the dimension of the islands, and the size i* of
the critical nucleus for island formation. In this paper we study the dependence of
γ on i* in one–dimensional epitaxial growth. We derive that
for 
and confirm this result by computer
simulations.
PACS: 81.15.z – Methods of deposition of films and coatings; film growth and epitaxy / 81.10.Bk – Growth from vapor / 05.50.+q – Lattice theory and statistics; Ising problems
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1998
