Island distance in one–dimensional epitaxial growth*
FB 10, Theoretische Physik, Gerhard–Mercator–Universität Duisburg, 47048
2 Center for Polymer Studies, Boston University, Boston, 02215 MA, USA
Accepted: 23 June 1998
Published online: 15 October 1998
The typical island distance in submonolayer epitaxial growth depends on the growth conditions via an exponent γ. This exponent is known to depend on the substrate dimensionality, the dimension of the islands, and the size i* of the critical nucleus for island formation. In this paper we study the dependence of γ on i* in one–dimensional epitaxial growth. We derive that for and confirm this result by computer simulations.
PACS: 81.15.z – Methods of deposition of films and coatings; film growth and epitaxy / 81.10.Bk – Growth from vapor / 05.50.+q – Lattice theory and statistics; Ising problems
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1998