https://doi.org/10.1007/s100510050634
Influence of the interface structure on the barrier height of homogeneous Pb/n-Si(111) Schottky contacts
Laboratorium für Festkörperphysik, Gerhard-Mercator-Universität Duisburg,
47048 Duisburg, Germany
Received:
14
May
1998
Accepted:
7
September
1998
Published online: 15 February 1999
Unreconstructed interfaces may be prepared by
evaporation of thick Pb films onto
surfaces at
room temperature. Current-voltage and capacitance-voltage characteristics
of such
Schottky contacts were measured in the
temperature range between 140 and 300 K. The experimental data are
analyzed by applying the thermionic-emission theory of inhomogeneous
metal-semiconductor contacts as well as the "standard" thermionic-emission
theory. From both methods the Schottky barrier height of laterally homogeneous
contacts results as 0.724 eV. This value is by
74 meV larger than the previously observed barrier heights of laterally homogeneous
interfaces. Similar differences were reported for
unreconstructed and
reconstructed Al-
and
contacts. The reduced barrier heights of all these
interfaces are explained by the electric dipole associated with the
stacking faults of
reconstructions at
surfaces and
interfaces.
PACS: 73.30.+y – Surface double layers, Schottky barriers, and work functions / 73.40.Ei – Rectification
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999