https://doi.org/10.1007/s100510050702
Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy
1
Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz,
Germany
2
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
3
United Institute of Geology, Geophysics and Mineralogy, 630090 Novosibirsk, Russia
Received:
9
September
1998
Revised:
22
October
1998
Published online: 15 April 1999
We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.
PACS: 63.22.+m – Phonons in low-dimensional structures and small particles / 78.30.Fs – III-V and II-VI semiconductors
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999