https://doi.org/10.1007/s100510050784
Non-equilibrium spin accumulation in ferromagnetic single-electron transistors
1
Delft University of Technology,
Laboratory of Applied Physics and
Delft Institute of Microelectronics and Submicrontechnology (DIMES),
2628 CJ Delft, The Netherlands
2
Philips Research Laboratories, Prof.
Holstlaan 4, 5656 AA Eindhoven, The
Netherlands
3
Nagoya University,
Department of Applied Physics, Nagoya,
Aichi 46401, Japan
Received:
6
May
1998
Published online: 15 June 1999
We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.
PACS: 73.40.Gk – Tunneling / 75.70.-i – Magnetic films and multilayers / 73.23.Hk – Coulomb blockade; single-electron tunneling / 75.70.Pa – Giant magnetoresistance
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999
