Eur. Phys. J. B 9, 421-430 (1999)
https://doi.org/10.1007/s100510050784

Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

¹ Delft University of Technology, Laboratory of Applied Physics and Delft Institute of Microelectronics and Submicrontechnology (DIMES), 2628 CJ Delft, The Netherlands
² Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
³ Nagoya University, Department of Applied Physics, Nagoya, Aichi 46401, Japan

Received: 6 May 1998
Published online: 15 June 1999

Abstract

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.