https://doi.org/10.1007/s100510050837
Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors
1
Fachbereich Physik und wissenschaftliches Zentrum für
Materialwissenschaften,
Philipps-Universität Marburg,
Renthof 5, 35032 Marburg, Germany,
2
Institut de Physique Appliquée,
École Polytechnique
Fédérale de Lausanne, 1015 Lausanne,
Switzerland
Corresponding author: a john.golub@physik.uni-marburg.de
Revised:
26
November
1998
Published online: 15 July 1999
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
PACS: 73.20.Dx – Electron states in low-dimensional structures (superlattices, quantum well structures and multilayers) / 72.15.Rn – Localization effects (Anderson or weak localization) / 78.66.-w – Optical properties of specific thin films, surfaces, and low-dimensional structures
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999
