https://doi.org/10.1007/s100510050845
Origin and doping dependence of the photoemission pseudogap in Cu oxides
Grenoble High Magnetic Field Laboratory, MPI-FKF and CNRS, BP 166, 38042 Grenoble,
France
Corresponding author: a nunezreg@labs.polycnrs-gre.fr
Received:
9
April
1999
Published online: 15 July 1999
A recent report on ARPES on insulating , compared
to previous data from
and Dy-doped
, sheds new light on the origin of the
anisotropic pseudogap observed in the normal state of underdoped cuprate oxides.
The energy dispersion of the insulator is attributed to strong AF correlations
enhanced by the diagonal hopping between magnetic sites, which is progressively
deformed by the possibility of nearest neighbour hopping, that increases with
hole doping.
PACS: 74.25.Jb – Electronic structure / 74.72.-h – High-Tc compounds
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999