https://doi.org/10.1007/s100510050892
Models for magnetoresistance in tunnel junctions
1
Department of Physics, University of Missouri-Rolla, Rolla, MO 65409, USA
2
Department of Physics, New York University, 4 Washington Place, New York, NY 10003, USA
Corresponding author: a levy@nyu.edu
Received:
9
January
1999
Revised:
10
February
1999
Published online: 15 August 1999
We show there are putative pitfalls when one predicts the magnetoresistance of magnetic tunnel junctions (JMR) based on different toy models. Amongst them are the sensitivity of the MR to the details of the profile of the potential barrier between the metallic electrodes and the insulating barrier, and the common assumption of only one band of electrons. We indicate the ingredients that are necessary to obtain a more complete description of the JMR of magnetic tunnel junctions.
PACS: 73.40.Gk – Tunneling / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) / 75.70.Cn – Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999