https://doi.org/10.1007/s100510051194
The finite-temperature photoluminescence correlation function in semiconductor heterostructures
1
Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP 13565-905, Brazil
2
Departamento de Física Teórica de la Materia Condensada,
Universidad Autónoma de Madrid, Cantoblanco, Madrid 28049, Spain
Corresponding author: a mtavares@Glue.umd.edu
Received:
20
November
1998
Revised:
5
March
1999
Published online: 15 October 1999
We report the inclusion of temperature effects on the Mahan-Nozières-De Dominicis framework to study both many-body and temperature effects in photoluminescence spectra of doped semiconductors. The electronic part of the correlation function characterizes the photoluminescence spectra. We have treated the optical valence hole as a localized scattering potential center and studied effects of the electron-hole interaction enhancement on the photoluminescence spectra leading to the appearance of shake-up structures. We also have identified a term in the correlation function which represents the finite-temperature contribution to the intensities of the shake-up structures. The method is used to study the magnetophotoluminescence of modulation-doped quantum wells with a weak periodic lateral potential.
PACS: 71.10-w – Theories and models of many electron systems / 78.66-w – Optical properties of specific thin films, surfaces, and low dimensional structures
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999
