https://doi.org/10.1007/s100510050994
Thermoelectric transport properties in disordered systems near the Anderson transition
Institut für Physik, Technische Universität,
09107 Chemnitz, Germany
Corresponding author: a villagonzalo@physik.tu-chemnitz.de
Received:
5
February
1999
Published online: 15 November 1999
We study the thermoelectric transport properties in the
three-dimensional Anderson model of localization near the
metal-insulator transition (MIT). In particular, we investigate the
dependence of the thermoelectric power S, the thermal conductivity
K, and the Lorenz number L0 on temperature T. We first
calculate the T dependence of the chemical potential μ from
the number density n of electrons at the MIT using an averaged
density of states obtained by diagonalization. Without any
additional approximation, we determine from 
the behavior of
S, K and L0 at low T as the MIT is approached. We find
that σ and K decrease to zero at the MIT as
and show that S does not diverge. Both S and
L0 become temperature independent at the MIT and depend only on
the critical behavior of the conductivity.
PACS: 61.43.-j – Disordered solids / 71.30.+h – Metal-insulator transitions and other electronic transitions / 72.15.Cz – Electrical and thermal conduction in amorphous and liquid metals and alloys
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999
