https://doi.org/10.1007/s100510050019
Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics
1
Institut für Theoretische Physik, Technische Universität Berlin,
Hardenbergstrasse 36, 10623, Berlin, Germany
2
Ioffe Physicotechnical Institute of Russian Academy of Sciences, Politechnicheskaya 26,
194021, St. Petersburg, Russia
Corresponding author: a schoell@physik.tu-berlin.de
Received:
19
March
1999
Published online: 15 January 2000
We study the propagation of a lateral current density front in a bistable semiconductor system with S- or Z-shaped current-voltage characteristics. It is demonstrated that an external load circuit introduces a global coupling which leads to positive or negative feedback upon the front dynamics in S- or Z-type systems, respectively. This results in accelerated or decelerated front motion. The type of feedback can be reversed if the system is operated in an active external circuit with negative load resistance. Double barrier resonant tunneling diodes (DBRT) and heterostructure hot electron diodes (HHED) are used as examples of Z- and S-type systems, respectively.
PACS: 05.70.Ln – Nonequilibrium and irreversible thermodynamics / 72.20.Ht – High-field and nonlinear effects / 85.30.-z – Semiconductor devices
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2000
