https://doi.org/10.1007/s100510051163
Pseudogap effects on the c-axis charge dynamics in copper oxide materials
1
CCAST (World Laboratory) PO Box 8730, Beijing 100080, P.R. China
2
Department of Physics, Beijing Normal University, Beijing 100875, P.R. China
3
National Laboratory of Superconductivity, Academia Sinica, Beijing 100080, P.R. China
Received:
29
July
1999
Revised:
24
January
2000
Published online: 15 June 2000
The c-axis charge dynamics of copper oxide materials in the underdoped and optimally doped regimes has been studied by considering the incoherent interlayer hopping. It is shown that the c-axis charge dynamics for the chain copper oxide materials is mainly governed by the scattering from the in-plane fluctuation, and the c-axis charge dynamics for the no-chain copper oxide materials is dominated by the scattering from the in-plane fluctuation incorporating with the interlayer disorder, which would be suppressed when the holon pseudogap opens at low temperatures and lower doping levels, leading to the crossovers to the semiconducting-like range in the c-axis resistivity and the temperature linear to the nonlinear range in the in-plane resistivity.
PACS: 71.27.+a – Strongly correlated electron systems; heavy fermions / 72.10.-d – Theory of electronic transport; scattering mechanisms / 74.72.-h – High-Tc compounds
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2000
