Eur. Phys. J. B 15, 607-614 (2000)
https://doi.org/10.1007/s100510051163

Pseudogap effects on the c-axis charge dynamics in copper oxide materials

¹ CCAST (World Laboratory) PO Box 8730, Beijing 100080, P.R. China
² Department of Physics, Beijing Normal University, Beijing 100875, P.R. China
³ National Laboratory of Superconductivity, Academia Sinica, Beijing 100080, P.R. China

Received: 29 July 1999
Revised: 24 January 2000
Published online: 15 June 2000

Abstract

The c-axis charge dynamics of copper oxide materials in the underdoped and optimally doped regimes has been studied by considering the incoherent interlayer hopping. It is shown that the c-axis charge dynamics for the chain copper oxide materials is mainly governed by the scattering from the in-plane fluctuation, and the c-axis charge dynamics for the no-chain copper oxide materials is dominated by the scattering from the in-plane fluctuation incorporating with the interlayer disorder, which would be suppressed when the holon pseudogap opens at low temperatures and lower doping levels, leading to the crossovers to the semiconducting-like range in the c-axis resistivity and the temperature linear to the nonlinear range in the in-plane resistivity.