Single electron tunneling at large conductance: The semiclassical approach
Fakultät für Physik, Albert-Ludwigs-Universität, Hermann-Herder-Straße 3, 79104
Published online: 15 August 2000
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic environment of the device is treated in terms of the Caldeira-Leggett model. We obtain the linear conductance from the Kubo formula leading to a formally exact expression which is evaluated in the semiclassical limit. Specifically we consider three models. First, the influence of an electromagnetic environment of arbitrary impedance on a single tunnel junction is studied focusing on the limits of large tunneling conductance and high to moderately low temperatures. The predictions are compared with recent experimental data. Second, the conductance of an array of N tunnel junctions is determined in dependence on the length N of the array and the environmental impedance. Finally, we consider a single electron transistor and compare our results for large tunneling conductance with experimental findings.
PACS: 73.23.Hk – Coulomb blockade; single-electron tunneling / 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2000