Photoemission study of the carrier bands in Bi(111)

M. Hengsberger; P. Segovia; M. Garnier; D. Purdie; Y. Baer

doi:10.1007/s100510070097

EPJ

Photoemission study of the carrier bands in Bi(111)

M. Hengsberger, P. Segovia, M. Garnier, D. Purdie and Y. Baer

Institut de Physique, Université de Neuchâtel, 1 rue A.-L. Breguet, 2000 Neuchâtel, Switzerland

Received: 8 June 2000
Published online: 15 October 2000

Abstract

We present high-resolution photoemission data from the Bi(111)-surface. The electronic structure of the semimetal close to the Fermi level has been found to change dramatically with respect to the well established bulk band structure. The Fermi surfaces observed for the electron and hole bands resemble those of the next group-V element, antimony, probably as a consequence of surface relaxation. This results in a relatively high surface charge density. The observed temperature dependence of the electron Fermi energy confirms this result.

PACS: 79.60.-i – Photoemission and photoelectron spectra / 73.20.At – Surface states, band structure, electron density of states