Eur. Phys. J. B 18, 215-225 (2000)
https://doi.org/10.1007/s100510070051

Doping-dependent electronic structure of cuprates studied using angle-scanned photoemission

¹ Physik-Institut der Universität Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland
² Institut de Physique, Université de Fribourg, 1700 Fribourg, Switzerland
³ Institut de Physique Appliquée, EPFL, 1015 Lausanne, Switzerland
⁴ DP/IGA, EPFL, 1015 Lausanne, Switzerland

Received: 12 October 1999
Revised: 12 April 2000
Published online: 15 November 2000

Abstract

Full k -maps of the electronic structure near the Fermi level of differently doped cuprates measured with angle-scanned photoelectron spectroscopy are presented. The valence band maximum of the antiferromagnetic insulator Sr₂CuO₂Cl₂, which is taken as a representative of an undoped cuprate, and the Fermi surfaces of overdoped, optimally doped and underdoped Bi₂Sr₂CaCu₂O high-temperature superconductors are mapped in the normal state. The results confirm the existence of large Luttinger Fermi surfaces at high doping with a Fermi surface volume proportional to (1+x), where x is the hole concentration. At very low doping, however, we find that this assumption based on Luttinger's theorem is not fulfilled. This implies a change in the topology of the Fermi surface. Furthermore the intensity of the shadow bands observed on the Fermi surface of Bi₂Sr₂CaCu₂O as a function of the doping is discussed.