https://doi.org/10.1007/s100510070021
A novel mechanism for spin dephasing due to spin-conserving scatterings
1
Chemistry Department, University of California, Santa Barbara,
California 93106, USA
2
Computational Quantum Optoelectronics, NASA Ames Research Center, M/S N229-1,
Moffett Field, California 94035, USA
Corresponding author: a mwu@chem.ucsb.edu
Received:
29
June
2000
Published online: 15 December 2000
A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.
PACS: 67.57.Lm – Spin dynamics / 42.50.Md – Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency / 78.47.+p – Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2000
