Eur. Phys. J. B 19, 17-20 (2001)
https://doi.org/10.1007/s100510170345

Variational calculations of ionized-donor-bound excitons in GaAs-Al_xGa_1-xAs quantum wells^*

¹ Department of Physics, Hebei Normal University, Shijiazhuang 050016, PR China
² National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, PR China

Corresponding author: ^a This email address is being protected from spambots. You need JavaScript enabled to view it.

Received: 17 July 2000
Revised: 13 November 2000
Published online: 15 January 2001

Abstract

Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bound to an ionized donor impurity () in GaAs-Al_xGaAs quantum wells for the values of the well width from 10 to 300 Å, when the dopant is located in the center of the well and at the edge of the well. The theoretical results confirm that the previous experimental speculation proposed by Reynolds et al. [Phys. Rev. B 40, 6210 (1989)] is the binding energy of for the dopant at the edge of the well. In addition, we also calculate the center-of-mass wave function of the exciton and the average interparticle distances. The results are discussed in detail.