https://doi.org/10.1007/s100510170304
Low frequency and weakly nonlinear spin transport in ferromagnet/insulator single and double junctions
Department of Physics, Graduate School at Beijing, University of Science and Technology of
China, Chinese Academy of Sciences, PO Box 3908, Beijing 100039, PR China
Corresponding author: a gs1966@sina.com
Received:
1
September
2000
Revised:
5
December
2000
Published online: 15 February 2001
In this paper, we apply Büttiker's gauge invariant, charge conservation, nonlinear transport theory to explore the spin-polarized tunneling of ferromagnet/insulator (semiconductor) single and double junctions. The Green function of spin-polarized tunneling is calculated by the tight-binding approximation method. The energy and the angle (between the molecular field and the vertical axis) dependences of the weakly nonlinear dc transport coefficient and the linear low frequency ac transport coefficient are investigated. The ac tunneling magnetoresistance is also discussed.
PACS: 75.70.Cn – Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) / 73.40.Rw – Metal-insulator-metal structures / 73.23.Hk – Coulomb blockade; single-electron tunneling
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001
