https://doi.org/10.1007/BF01352592
A system with a complex phase transition: Indium chains on Si(111)
Institut de Physique, Université de Neuchâtel, rue
A.-L. Breguet 1, 2000 Neuchâtel, Switzerland
Corresponding author: a thorsten.pillo@unine.ch
Received:
12
December
2000
Revised:
8
February
2001
Published online: 15 April 2001
We examined in detail the geometric and electronic structure of thin In
chains on vicinal Si(111) surfaces by means of low energy electron
diffraction and ultrahigh-resolution
photoemission as a function of temperature. Our data reveal a transition around
Tc = 115 K from a high temperature ()- to a low temperature (
)-phase
being reversible with a small hysteresis of the order 10 K. ARPES
spectra exhibit clearly important concomitant changes in the electronic
band structure near the Fermi surfaces and at the border of the
surface Brillouin zones. We
derive the dispersive behavior of the bands involved in the
transition in detail and demonstrate that at least two surface state bands
m2 and m3 show the opening of a pseudo energy gap on the Fermi surface
leaving small but finite spectral weight in the low-temperature state. We conclude
that this transition is probably driven by a similar but more complex
mechanism than in a conventional Peierls transition.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 71.45.Lr – Charge-density-wave systems / 79.60.-i – Photoemission and photoelectron spectra
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001