https://doi.org/10.1007/s100510170207
Influence of Al content on temperature dependence of excitonic transitions in quantum wells
1
Departamento de Física, Universidade Estadual de Londrina-UEL, CP6001,
CEP 86051-970, Londrina-Paraná, Brazil
2
Instituto de Física Gleb Wathaggini-IFGW, UNICAMP,
CP 6165, 13081-970 Campinas, SP, Brazil
3
Instituto de Física da Universidade de São Paulo-IFUSP, PO Box
66318, 05315-970, São Paulo, SP, Brazil
Corresponding author: a lourenco@uel.br
Received:
12
July
2000
Published online: 15 May 2001
AlxGa
As/GaAs double quantum well structures with different well
thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were
characterized by the photoluminescence technique. The temperature dependence of
excitonic transitions in the temperature range of 2 K to 300 K were investigated. The
photoluminescence data obtained give clear evidence of the influence of the
aluminum concentration on the temperature dependence of excitonic transitions in
the quantum wells. Varshni [Physica (Utrecht) 34, 194 (1967)], Viña et al.
[Phys. Rev. B 30, 1979 (1984)] and Pässler [Phys. Stat. Sol. (b) 200, 155 (1997)]
models were used to fit the experimental points.
PACS: 71.38.-k – Polarons and electron-phonon interactions / 71.35.-y – Excitons and related phenomena / 78.55.-m – Photoluminescence
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001
