https://doi.org/10.1007/s100510170194
Formation of porous silicon: an in situ investigation with high-resolution X-ray diffraction
Laboratoire de Spectrométrie Physique (CNRS UMR 5588) , Université J. Fourier Grenoble 1, BP 87, 38402 Saint Martin d'Hères Cedex, France
Corresponding author: a chamard@esrf.fr
Received:
20
November
2000
Published online: 15 May 2001
The single crystal property of p+ type porous silicon is used to investigate the formation mechanisms of this material by in situ X-ray diffraction. During anodisation, the diffraction peak of the porous silicon layer exhibits a lattice parameter expansion, with the usual value. For long anodisation time, a parasitic chemical dissolution leads to a regular and homogeneous decrease of lattice mismatch, also observed during pure chemical dissolution.
PACS: 61.10.Eq – X-ray scattering (including small-angle scattering) / 68.55.-a – Thin film structure and morphology / 81.07.-b – Nanoscale materials and structures: fabrication and characterization / 68.55.Ac – Nucleation and growth: microscopic aspects
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001
