Eur. Phys. J. B 21, 499-505 (2001)
https://doi.org/10.1007/s100510170159

Carrier scattering by Auger mechanism in a single quantum wire

¹ Groupe de Physique des Solides, CNRS, Universités Pierre et Marie Curie et Denis Diderot, 2 place Jussieu, 75251 Paris Cedex 05, France
² Université Évry-Val d'Essonne, boulevard François Mitterrand, 91025 Évry Cedex, France
³ Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan and CREST, Japan Science and Technology, 4-1-8 Honcho, Kawagushi 332-0012, Japan

Corresponding author: ^a voliotis@gps.jussieu.fr

Received: 5 February 2001
Published online: 15 June 2001

Abstract

We report on time-resolved microphotoluminescence experiments in a single GaAs/GaAlAs V-shaped quantum wire as a function of optical excitation intensity. At low pump power we observe that excitons are localized in quantum boxes formed by the local potential minima existing along the wire axis. As the pump power is increased, state filling of the lowest lying levels of the boxes appears. When two carriers occupy the first excited level of the box, a very efficient Auger scattering occurs, leading to a transfer of carriers from one box to another neighbouring one. The intradot Auger scattering time has been measured and is of the same order of magnitude as the LA-phonon emission rate.