https://doi.org/10.1007/PL00011147
Critical behaviour near the metal-insulator transition of a doped Mott insulator
1
Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
2
Theoretische Physik III, Elektronische Korrelationen und Magnetismus, Institut für Physik, Universität Augsburg, 86135 Augsburg,
Germany
3
Department of Mathematics, Imperial College, 180 Queen's Gate, London SW7 2BZ, UK
4
Lehrstuhl Festkörpertheorie, Institut für Physik, Humboldt-Universität zu Berlin, Germany
Corresponding author: a c42545a@nucc.cc.nagoya-u.ac.jp
Received:
15
March
2001
Revised:
22
May
2001
Published online: 15 August 2001
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value Uc, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping.
PACS: 71.10.Fd – Lattice fermion models (Hubbard model, etc.) / 71.27.+a – Strongly correlated electron systems; heavy fermions / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001