Eur. Phys. J. B 22, 283-290 (2001)
https://doi.org/10.1007/PL00011147

Critical behaviour near the metal-insulator transition of a doped Mott insulator

¹ Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
² Theoretische Physik III, Elektronische Korrelationen und Magnetismus, Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany
³ Department of Mathematics, Imperial College, 180 Queen's Gate, London SW7 2BZ, UK
⁴ Lehrstuhl Festkörpertheorie, Institut für Physik, Humboldt-Universität zu Berlin, Germany

Corresponding author: ^a c42545a@nucc.cc.nagoya-u.ac.jp

Received: 15 March 2001
Revised: 22 May 2001
Published online: 15 August 2001

Abstract

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value U_c, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping.