Eur. Phys. J. B 23, 345-350 (2001)
https://doi.org/10.1007/s100510170054

Charge profile of surface doped C₆₀

¹ Theoretische Physik, Eidgenössische Technische Hochschule, 8093 Zürich, Switzerland
² Laboratoire de Physique Quantique (UMR-CNRS 5626) , Université Paul Sabatier, 31062 Toulouse, France

Corresponding author: ^a swehrli@itp.phys.ethz.ch

Received: 21 June 2001
Published online: 15 October 2001

Abstract

We study the charge profile of a C₆₀-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than ~ 0.3 electron (or hole) per C₆₀ molecule. The morahedral disorder of the C₆₀ molecules smoothens the structure in the density of states.