Charge profile of surface doped C60
Theoretische Physik, Eidgenössische Technische Hochschule,
2 Laboratoire de Physique Quantique (UMR-CNRS 5626) , Université Paul Sabatier, 31062 Toulouse, France
Corresponding author: a email@example.com
Published online: 15 October 2001
We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than ~ 0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states.
PACS: 73.25.+i – Surface conductivity and carrier phenomena / 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures / 74.70.Wz – Fullerenes and related materials
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001