Spin-polarized tunneling in ferromagnetic double barrier junctions
Department of Physics, Shahid Beheshti University, 19839 Tehran, Iran
Corresponding author: a firstname.lastname@example.org
Revised: 20 August 2001
Published online: 15 November 2001
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers.
PACS: 72.25.-b – Spin polarized transport / 75.50.Pp – Magnetic semiconductors / 75.70.Ak – Magnetic properties of monolayers and thin films
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001