Eur. Phys. J. B 24, 149-153 (2001)
https://doi.org/10.1007/s100510170002

Spin-polarized tunneling in ferromagnetic double barrier junctions

Department of Physics, Shahid Beheshti University, 19839 Tehran, Iran

Corresponding author: ^a a-saffarzadeh@cc.sbu.ac.ir

Received: 9 June 2001
Revised: 20 August 2001
Published online: 15 November 2001

Abstract

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers.