https://doi.org/10.1007/s10051-001-8678-1
Temperature dependence of the YBa2Cu3O7 energy gap in differently oriented tunnel junctions
1
Physics Department and INFM Unit, University of Salerno, Via S.
Allende, 84081 Baronissi (SA), Italy
2
B. Verkin Institute for
Low Temperature Physics and Engineering,
47 Lenin Ave, 310164 Kharkov, Ukraine
Corresponding author: a cucolo@sa.infn.it
Received:
20
July
2001
Published online: 15 December 2001
We have applied the break-junction technique to highly
biepitaxial c-axis oriented YBa2Cu3O7 thin films
with TC (ρ=0) = 91 K. Mechanically adjustable junctions
with a good stability and tunneling current favored along the
ab-planes have been realized. The conductance
characteristics of these junctions show the presence of gap
related maxima that move towards zero bias for increasing
temperatures. Considering the misorientation angle 45
± 5
of the junction, a maximum
gap value at the Fermi level
22 meV is
inferred at T = 13 K. The temperature dependence of the gap
related structures, shows a quasilinear behavior for
similar to that observed in c-axis oriented, S-I-N
type YBa2Cu3O7 planar junctions.
PACS: 74.50.+r – Proximity effects, weak links, tunneling phenomena, and Josephson effects / 74.72.Bk – Y-based cuprates / 74.76.Bz – High-Tc films
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001