https://doi.org/10.1140/epjb/e20020102
Phonon heat transport in silicon nanowires
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
Chinese Academy of Science, Shanghai 200083, PR China
Corresponding author: a xianglu@mail.sitp.ac.cn
Received:
24
April
2001
Revised:
23
December
2001
Published online: 15 April 2002
Thermal conductivity of silicon and porous silicon nanowires based on the equation of phonon radiative transport is theoretically evaluated. The thermal conductivities of silicon nanowires with square cross-sections are found to match molecular dynamics simulation results reasonably well. It is shown that the results of meso-porous silicon nanowires are about two orders of magnitude lower than that of silicon nanowires in a wide range of temperature (50 K–300 K).
PACS: 63.20.Kr – Phonon-electron and phonon-phonon interactions / 63.22.+m – Phonons or vibrational states in low-dimensional structures and nanoscale materials / 65.40.-b – Thermal properties of crystalline solids
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2002
