Eur. Phys. J. B 26, 375-378 (2002)
https://doi.org/10.1140/epjb/e20020102

Phonon heat transport in silicon nanowires

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, PR China

Corresponding author: ^a xianglu@mail.sitp.ac.cn

Received: 24 April 2001
Revised: 23 December 2001
Published online: 15 April 2002

Abstract

Thermal conductivity of silicon and porous silicon nanowires based on the equation of phonon radiative transport is theoretically evaluated. The thermal conductivities of silicon nanowires with square cross-sections are found to match molecular dynamics simulation results reasonably well. It is shown that the results of meso-porous silicon nanowires are about two orders of magnitude lower than that of silicon nanowires in a wide range of temperature (50 K–300 K).