Overhauser shift of the electron spin-resonance line of Si:P at the metal-insulator transition: II. 29Si contribution
Physikalisches Institut, Universität Karlsruhe (TH), 76128 Karlsruhe, Germany
Corresponding author: a email@example.com
Published online: 15 April 2002
The electron-spin resonance (ESR) line of delocalised electrons shifts upon saturation due to the hyperfine interaction with the dynamically polarized nuclear spins. The 29Si part of the Overhauser shift of the ESR line of phosphorus doped silicon (Si:P) is separated in the concentration range 2.7 ... covering the metal-insulator transition. The Overhauser shift profiles, recorded versus 29Si nuclear magnetic resonance (NMR) frequency, are asymmetric. Their dependence on temperature and ESR saturation compares reasonably with simulations. Time and NMR frequency dependence of the dynamic nuclear polarization is studied in detail. No pronounced variation of the 29Si Overhauser shift profiles with P concentration is observed, but the maximum value of the shift profile decreases with increasing P concentration. In contrast to standard 29Si NMR results, these measurements reveal the behaviour of the 29Si nuclei close to the P doping sites.
PACS: 76.70.-r – Magnetic double resonances and cross effects / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2002