Eur. Phys. J. B 26, 455-465 (2002)
https://doi.org/10.1140/epjb/e20020114

Overhauser shift of the electron spin-resonance line of Si:P at the metal-insulator transition: II. ²⁹Si contribution

Physikalisches Institut, Universität Karlsruhe (TH), 76128 Karlsruhe, Germany

Corresponding author: ^a ulli@piobelix.physik.uni-karlsruhe.de

Received: 8 November 2001
Published online: 15 April 2002

Abstract

The electron-spin resonance (ESR) line of delocalised electrons shifts upon saturation due to the hyperfine interaction with the dynamically polarized nuclear spins. The ²⁹Si part of the Overhauser shift of the ESR line of phosphorus doped silicon (Si:P) is separated in the concentration range 2.7 ... covering the metal-insulator transition. The Overhauser shift profiles, recorded versus ²⁹Si nuclear magnetic resonance (NMR) frequency, are asymmetric. Their dependence on temperature and ESR saturation compares reasonably with simulations. Time and NMR frequency dependence of the dynamic nuclear polarization is studied in detail. No pronounced variation of the ²⁹Si Overhauser shift profiles with P concentration is observed, but the maximum value of the shift profile decreases with increasing P concentration. In contrast to standard ²⁹Si NMR results, these measurements reveal the behaviour of the ²⁹Si nuclei close to the P doping sites.