Eur. Phys. J. B 27, 565-570 (2002)
https://doi.org/10.1140/epjb/e2002-00190-1

Spin-dependent tunneling in nanostructures consisting of magnetic barriers

¹ Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031, PR China
² Department of Physics, Xiangtan University, Xiangtan, Hunan 411105, PR China

Corresponding author: ^a yxjin@mail.issp.ac.cn

Received: 27 December 2001
Revised: 13 March 2002
Published online: 25 June 2002

Abstract

We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG.