Phase transition and random-field induced domain wall response of SrTi18O3
Laboratorium für Angewandte Physik, Gerhard Mercator Universität
Duisburg, 47048 Duisburg, Germany
2 Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
Corresponding author: a firstname.lastname@example.org
Revised: 25 March 2002
Published online: 19 July 2002
The dielectric permittivity of SrTi18O3 (STO18) is studied under a dc electric field E as a function of the temperature, T. In vs. T, a double-peak is found when 0<E<30 KV/m. While the peak at high-T is attributed to the smeared ferroelectric phase transition, the low-T one is induced by domain wall motion. The transverse Ising model including an external homogeneous and quenched random-fields is successfully used to describe both the smeared phase transition and the domain wall response in the low-T domain state. The calculations are in good agreement with the experimental results.
PACS: 77.22.Ch – Permittivity (dielectric function) / 77.80.Bh – Phase transitions and Curie point / 77.80.Dj – Domain structure; hysteresis / 77.84.Dy – Niobates, titanates, tantalates, PZT ceramics, etc.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2002