Eur. Phys. J. B 28, 163-171 (2002)
https://doi.org/10.1140/epjb/e2002-00218-6

Phase transition and random-field induced domain wall response of SrTi₁₈O₃

¹ Laboratorium für Angewandte Physik, Gerhard Mercator Universität Duisburg, 47048 Duisburg, Germany
² Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

Corresponding author: ^a wolfgang@kleeman.uni-duisburg.de

Received: 4 January 2002
Revised: 25 March 2002
Published online: 19 July 2002

Abstract

The dielectric permittivity of SrTi₁₈O₃ (STO18) is studied under a dc electric field E as a function of the temperature, T. In vs. T, a double-peak is found when 0<E<30 KV/m. While the peak at high-T is attributed to the smeared ferroelectric phase transition, the low-T one is induced by domain wall motion. The transverse Ising model including an external homogeneous and quenched random-fields is successfully used to describe both the smeared phase transition and the domain wall response in the low-T domain state. The calculations are in good agreement with the experimental results.