https://doi.org/10.1140/epjb/e2002-00388-1
Study of Ce(Rh1-xPdx)2Si2: pronounced differences between the CeRh2Si2 and CePd2Si2 ground states
1
Lab. Bajas Temperaturas, Centro Atómico Bariloche - IB (CNEA) and
CONICET, 8400 S.C. de Bariloche, Argentina
2
Max-Planck Institut for
Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany
Corresponding author: a berisso@cab.cnea.gov.ar
Received:
31
December
2001
Revised:
6
July
2002
Published online:
19
December
2002
We present electrical resistivity and specific heat
measurements of alloys on the Rh rich side of the phase diagram of
the Ce(Rh1-xPdx)2Si2 system. We compare these
results with those obtained at intermediate and low Rh
concentrations. The analysis of the concentration and temperature
dependence of the entropy and of the scaling behaviour of
and
clearly confirm a separation of the
magnetic phase diagram into two regions: the region
,
showing a concentration independent characteristic temperature for
the 4f-electrons with
, while for x>0.3,
T0 decreases to
. At low Pd-content,
TN decreases very rapidly from
in pure
CeRh2Si2 to
at x=0.1. With higher Pd
concentration TN stabilizes at
whereas
the magnitude of the anomalies in
and in the
susceptibility around TN are further reduced and disappear at
. This differs from the behavior found on the Pd-rich
side, where TN decreases continuously to zero with increasing
Rh content. The pronounced differences observed between both phase
boundaries and the drastic effect of doping on the Rh rich side
suggest an itinerant character in CeRh2 Si2, in contrast
with the localized character of CePd2Si2. Further evidence
for the itinerant character of CeRh2Si2 is given by the
dependence observed for
, which scales with
of the prototype itinerant compound YCo2.
PACS: 71.10.Hf – Non-Fermi-liquid ground states, electron phase diagrams and phase transition in model systems / 71.27.+a – Strongly correlated electron systems; heavy fermions
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2002