https://doi.org/10.1140/epjb/e2003-00006-x
Raman spectroscopy of self-assembled Ge islands on Si
1
Department of Physics National Taiwan Normal University 117 Taipei, Taiwan
2
School of Electrical & Computer Engineering, Georgia Institute of Technology,
Atlanta, GA 30332-0250, USA
3
Center of Condensed Matter, National Taiwan University, 106 Taipei, Taiwan
Corresponding author: a yang1@scc.ntnu.edu.tw
Received:
30
May
2002
Revised:
20
August
2002
Published online:
27
January
2003
We present a Raman scattering study for self-organized Ge dots on Si substrate. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and peak frequency. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.
PACS: 78.30.Am – Elemental semiconductors and insulators / 78.66.Db – Elemental semiconductors and insulators / 63.22.+m – Phonons or vibrational states in low-dimensional structures and nanoscale materials
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003
