Band gaps and charge distribution in quasi-binary (GaSb)1-x(InAs)x crystals
International Center for Theoretical Physics, Trieste 34100, Italy
Corresponding author: a N_Bouarissa@yahoo.fr
Published online: 1 April 2003
Pseudopotential investigation of energy band gaps and charge distribution in quasi-binary (GaSb)1-x(InAs)x crystals has been reported. To the best of our knowledge, there had been no reported theoretical work on these materials. In agreement with experiment, the quasi-binary crystals of interest showed a significant narrowing of the optical band gap compared to the conventional GaxIn1-xAsySb1-y quaternary alloys (with ). Moreover, the absorption at the optical gaps indicated that (GaSb)1-x(InAs)x is a direct Γ to Γ band-gap semiconductor within a whole range of the x composition. The information derived from the present study predicts that the band gaps cross very important technological spectral regions and could be useful for thermophotovoltaic applications.
PACS: 71.20.–b – Electron density of states and band structure of crystalline solids / 71.23.Ft – Quasicrystals / 71.28.+d – Narrow-band systems
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003