Eur. Phys. J. B 32, 421-428 (2003)
https://doi.org/10.1140/epjb/e2003-00120-9

Theoretical study of electronic and positronic properties in Ga_xln_1-xP_ySb_zAs_1-y-z lattice matched to GaSb

Physics Department, University of M'sila, 28000 M'sila, Algeria

Corresponding author: ^a N_Bouarissa@yahoo.fr

Received: 30 August 2002
Revised: 12 February 2003
Published online: 24 April 2003

Abstract

The electronic and positronic properties of the pentanary semiconductor alloys Ga_xln_1-xP_ySb_zAs_1-y-z lattice matched to GaSb have been studied. The electron wave function is calculated semiempirically using the pseudopotential band model under the virtual crystal approximation. The positron wave function is evaluated under the point core approximation for the ionic potential. Electronic and positronic quantities namely, electronic structure and band gaps, positron band structure, effective mass and affinity, and electron-positron momentum densities have been predicted and their dependence on the phosphorus composition has been discussed.