https://doi.org/10.1140/epjb/e2003-00231-3
Electric-field and magnetic-field effects on electronic tunneling through magnetic-barrier nanostructures
Institute of Solid State Physics, Chinese Academy of
Sciences, PO Box 1129, Hefei 230031, PR China
Corresponding author: a mao-wang-lu@sohu.com
Received:
23
July
2002
Revised:
20
May
2003
Published online:
11
August
2003
We have theoretically investigated electric-field and magnetic-field effects on electronic transport properties in nanostructures consisting of realistic magnetic barriers created by lithographic patterning of ferromagnetic or superconducting films. The results indicate that the characteristics of transmission resonance are determined not only by the magnetic configuration and the incident wave vector but also strongly by the applied electric and magnetic fields. It is shown that transmission resonance shifts towards the low-energy region by applying the electric field, and that with increasing the electric field transmission resonance is suppressed for the entire incident wave vector in the magnetic nanostructures with antisymmetric magnetic profile, while for the magnetic nanostructures with symmetric magnetic profile transmission resonance is enhanced for certain incident wave vector. It is also shown that both transmission and conductance shift towards high-energy direction and are greatly suppressed with the increase of the external magnetic field.
PACS: 73.40.Gk – Tunneling / 73.23.-b – Electronic transport in mesoscopic system / 75.70.Cn – Interfacial magnetic properties (multilayers, superlattices)
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003