Eur. Phys. J. B 34, 351-357 (2003)
https://doi.org/10.1140/epjb/e2003-00231-3

Electric-field and magnetic-field effects on electronic tunneling through magnetic-barrier nanostructures

Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031, PR China

Corresponding author: ^a mao-wang-lu@sohu.com

Received: 23 July 2002
Revised: 20 May 2003
Published online: 11 August 2003

Abstract

We have theoretically investigated electric-field and magnetic-field effects on electronic transport properties in nanostructures consisting of realistic magnetic barriers created by lithographic patterning of ferromagnetic or superconducting films. The results indicate that the characteristics of transmission resonance are determined not only by the magnetic configuration and the incident wave vector but also strongly by the applied electric and magnetic fields. It is shown that transmission resonance shifts towards the low-energy region by applying the electric field, and that with increasing the electric field transmission resonance is suppressed for the entire incident wave vector in the magnetic nanostructures with antisymmetric magnetic profile, while for the magnetic nanostructures with symmetric magnetic profile transmission resonance is enhanced for certain incident wave vector. It is also shown that both transmission and conductance shift towards high-energy direction and are greatly suppressed with the increase of the external magnetic field.