Eur. Phys. J. B 34, 257-263 (2003)
https://doi.org/10.1140/epjb/e2003-00219-y

On the dechanneling of protons in Si [110]

¹ Institute of Nuclear Physics, Tandem Accelerator, NCSR `Demokritos' 15310, Aghia Paraskevi, Athens, Greece
² Laboratory of Physics, Vinča Institute of Nuclear Sciences, PO Box 522, 11001 Belgrade, Yugoslavia
³ IMEC, Kapeldreef 75, 3001 Leuven, Belgium

Corresponding authors: ^a kokkoris@inp.demokritos.gr - ^b petrovs@vin.bg.ac.yu

Received: 12 May 2003
Published online: 11 August 2003

Abstract

In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range  MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x_c, which represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam – crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.