On the dechanneling of protons in Si 
Institute of Nuclear Physics, Tandem Accelerator, NCSR `Demokritos'
Paraskevi, Athens, Greece
2 Laboratory of Physics, Vinča Institute of Nuclear Sciences, PO Box 522, 11001 Belgrade, Yugoslavia
3 IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Published online: 11 August 2003
In the present work, the dechanneling of protons in Si  is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and xc, which represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra of channeled protons along the Si  crystal axis. The results are compared to the ones obtained in the past for different beam – crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.
PACS: 61.85.+p – Channeling and related phenomena / 61.80.Jh – Ion radiation effects
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003