Point-defect properties in HCP rare earth metals with analytic modified embedded atom potentials
Department of Applied Physics, Hunan University, Changsha, 410082, PR China
2 Department of Production Systems Engineering, Toyohashi University of Technology, 1-1, Tempaku-cho, Toyohashi, 441-8580 Japan
Revised: 26 March 2003
Published online: 9 September 2003
The analytic embedded atom method (EAM) type many-body potentials of hcp rare earth metals (Dy, Er, Gd, Ho, Nd, Pr, and Tb) have been constructed. The hcp lattice is shown to be energetically most stable when compared with the fcc and bcc structure, and the hcp lattice with ideal c/a. The mechanical stability of the corresponding hcp lattice with respect to large change of density and c/a ratio is examined. The phonon spectra, stacking fault and surface energy are calculated. The activation energy for vacancy diffusion in these metals has been calculated and the most possible diffusion paths are predicted. Finally, the self-interstitial atom (SIA) formation energy and volume have been evaluated for eight possible sites. This calculation suggests that the crowdion and basal split are the most stable configurations. The SIA formation energy increases linearly with the increase of the melting temperature.
PACS: 34.20.Cf – Interatomic potentials and forces / 66.30.Fq – Self-diffusion in metals, semimetals, and alloys / 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters / 61.72.Bb – Theories and models of crystal defects
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003